A233 datasheet 2n3904

1996. 1. 28 1/3 semiconductor technical data kn3904 epitaxial planar npn transistor revision no : 0 general purpose application. switching application.

2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1

2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 / Ammopack TO-92 Bulk TO-92 Ammopack 1/5 Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a ... All Transistors Datasheet. Cross Reference Search. Transistor Database. 2n3904 [Old version datasheet] Medium Integrated Power Solution Using a Dual DC/DC Converter and an LDO [Old version datasheet] High-Integration, High-Efficiency Power Solution Using DC/DC Converters With DVFS Apr 21, 2008 · Any way to make a 2N3904 Transistor work like a 2N3704? Need help within 4 hours!!Ah! Home. Forums. ... instead we have a 2N3904. Here is the 3904 datasheet: ...

2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C 2N3705 Bipolar Transistors Page 3 09/05/08 V1.1 Specifications VCEO (V) VCBO Maximum (V) IC (mA) hFE Minimum at IC = 50mA fT Minimum (MHz) Ptot (mW) Pakage Part Number 30 50 0.8 50 100 625 TO-92 2N3705 Features, Applications: NPN silicon planar switching transistors. Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.