81c4256 datasheet

81c4256 datasheet, cross reference, circuit and application notes in pdf format.

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H11F1 H11F2 H11F3. DESCRIPTION. The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo- detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. SEMICONDUCTOR 5-3 HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs Features • 40A, 600V TJ = 25oC • 600V Switching SOA Capability CC81L-2830-01-L Inventory, Pricing, Datasheets from Authorized Distributors at ECIA. Instant results for CC81L-2830-01-L. '2004 Fairchild Semiconductor Corporation Rev. B, March 2004 FQP8N60C/FQPF8N60C QFET® FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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