Bd898 transistor datasheets

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BD244C High Power Bipolar Transistor Page 2 05/08/08 V1.1 Absolute Maximum Ratings Characteristic Symbol BD244C Unit Collector-Base Voltage (Open Emitter) VCBO Maximum 100 V Collector Emitter Voltage (Open Base) VCEO Collector Current IC 6.0 A Total Power Dissipation upto TC = 25°C Ptot 65 W Junction Temperature Tj 150 °C Collector Current ...

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www.edge-1.com BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS 4 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. MAXIMUM SAFE OPERATING REGIONS Figure 4. THERMAL INFORMATION Figure 5. MAXIMUM FORWARD-BIAS SAFE OPERATING AREA V CE - Collector-Emitter Voltage - V-1·0 -10 -100 -1000 I C - Collector Current - A-0.01 -0·1-1·0