Standard MOSFET, 200V 18A in TO-220 package.For more information: Datasheet ..
Data Sheet (current) [58 KB ] ... TRANSISTOR,TIP127,PNP DARL SIL,100Vceo,1000hfe 3A,TO-220 For more about Transistors, click here. Report a problem Suggest a product
Datasheet notes – If a part has too good to be true ratings, check the application notes carefully. For example, the IRF3703PBF claims 210 Amps continuous drain current at 25ºC. We don’t have to do any thermal calculations to know 220 Amps is a TON of current for a TO-220 package! Class-AB GaN-on-SiC HEMT Transistor 2731GN-120V Datasheet Revision 1.0 7 2 Product Overview The 2731GN-120V is an internally matched, common-source, class-AB, GaN-on-SiC HEMT transistor capable of providing over 15.7 dB gain, 120 W of pulsed RF output power at 200μs pulse width, 10% duty factor across the 2700 MHz to 3100 MHz band. The following is the list of RadioShack transistors, their specs for comparing, and links to datasheets. If you find inaccuracies, or complementary devices, do contact me. B20H100G TO-220 ON Transistor. Product Code: B20H100G TO-220 ON Transistor; Availability: In Stock; Just buy directly if needed,we will send out same day for you.Small quantity order is ok,we can send to anywhere in the world. Join GitHub today. GitHub is home to over 40 million developers working together to host and review code, manage projects, and build software together.
220 W Test signal: 2-c W-CDMA; G p: power gain P L(AV) = 55 W; V DS = 28 V 17.8 18.9 dB RL in: input return loss P L(AV) = 55 W; V DS = 28 V; I Dq = 1600 mA -15.5 -7 dB η D: drain efficiency P L(AV) = 55 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 1600 mA 29 34 % ACPR adjacent channel power ratio