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2 Data Sheet D17077EJ3V0DS 2SK3918 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V 10 µA 1N4001-1N4007 2001 Fairchild Semiconductor Corporation 1N4001-1N4007, Rev. C 1N4001 - 1N4007 General Purpose Rectifiers (Glass Passivated) Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics T A
1N4007 comparable with 1N4001 diode? Ask Question ... but if you look at some datasheets all specified parameters are the same except Vr and only two different ... 1N4001 - 1N4007 1.0A RECTIFIER DO-41 High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current Created Date 2/2/2009 10:44:05 AM
1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in PARAMETER TEST CONDITIONS SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNIT Maximum instantaneous forward voltage 1.0 A VF 1.1 V Maximum DC reverse current at rated DC blocking voltage TA = 25 °C IR 5.0 μA TA = 125 °C 50 Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)