Bd244c transistor datasheet s5151

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NPN SILICON POWER TRANSISTOR BD245C DRIX SEMICONDUCTOR DATASHEET Electrical characteristics at 25ºC case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA IB = 0 (see note 4) 100 120 V ICES Collecor-emitter cut-off current

BD244C: PNP SILICON POWER TRANSISTORS: Transys Electronics: BD244C: PNP SILICON POWER TRANSISTORS: Boca Semiconductor Corp... BD244C: COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS: STMicroelectronics: BD244C: COMPLEMENTARY SILICON POWER TRANSISTOR: Inchange Semiconductor ... BD244C: Silicon PNP Power Transistors: Rectron Semiconductor: BD244C: TO-220 - Power Transistors and Darlingtons: Comset Semiconductor: BD244C: SILICON PNP POWER TRANSISTORS BD243C BD244C Complementary power transistors Features Complementary NPN-PNP devices Applications Power linear and switching Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain pe Jun 13, 2019 · Upon the effective date of termination of this Agreement, all licenses granted to Licensee hereunder shall terminate and Licensee shall cease all use, copying, modification and distribution of the Content datashete shall promptly either destroy or return to ON Semiconductor all copies of the Content in Licensee’s possession or under Licensee’s control. BD244C: PNP SILICON POWER TRANSISTORS: Transys Electronics: BD244C: PNP SILICON POWER TRANSISTORS: Boca Semiconductor Corp... BD244C: COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS: STMicroelectronics: BD244C: COMPLEMENTARY SILICON POWER TRANSISTOR: Inchange Semiconductor ... BD244C: Silicon PNP Power Transistors: Rectron Semiconductor: BD244C: TO-220 - Power Transistors and Darlingtons: Comset Semiconductor: BD244C: SILICON PNP POWER TRANSISTORS NPN SILICON POWER TRANSISTOR BD245C DRIX SEMICONDUCTOR DATASHEET Electrical characteristics at 25ºC case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA IB = 0 (see note 4) 100 120 V ICES Collecor-emitter cut-off current

Trans GP BJT PNP 100V 6A 65000mW 3Pin(3+Tab) TO-220 Tube views details 2N Unijunction Transistor. TO−18 Package. Description: The 2N is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger . 2N Datasheet, 2N Unijunction Transistor Datasheet, buy 2N Transistor. 2N datasheet, 2N pdf, 2N data sheet, datasheet, data sheet, pdf, Boca Semiconductor Corporation, Silicon PN Unijuction Transistor. Nov 21, 2018 · At a minimum such license agreement shall safeguard ON Semiconductor’s ownership rights to the Software. Failure by either party hereto hd244c enforce any term of this Agreement shall not be held a waiver of such term nor prevent enforcement of such term thereafter, unless and to the extent expressly set forth in a writing signed by the party charged with such waiver. Through Hole Bipolar Transistors - BJT are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for Through Hole Bipolar Transistors - BJT. [email protected]@@@ pricing list: transistorall.com offers you the best [email protected]@@@ datasheet,transistor and [email protected]@@@ mosfet.