EPC9003, EPC9003C and EPC9054 Development Boards using the EPC2010 and EPC2010C 200V Half Bridge with Gate Drive EPC The development boards have a 200V maximum device voltage, 5A maximum output current, half bridge with onboard gate drives, featuring the EPC2010 and EPC2010C enhancement-mode (eGaN®) field effect transistor (FET).
EPC’s 350 V GaN transistor, EPC2050 has a maximum R DS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.
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2N3904(D26Z) datasheet, cross reference, circuit and application notes in pdf format. 2N3904(D26Z) datasheet & applicatoin notes - Datasheet Archive The Datasheet Archive The data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. FET Transistor Guide datasheet, ... 2N3904 2N3906 2N4400 2N4401 2N4402 ... The purpose of this development board is to simplify the evaluation process of the EPC2010 2N3904 equivalent. Abstract: 2N3904 JEDEC 2N3904 2N3903 2N3904G 2N3904RLRA h 2n3904 2N3904 dimension 2N3904RLRM 2N3904RLRPG Text: 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features , Preferred devices are recommended choices for future use and best overall value. Split/Splitless Inlet EPC Pneumatic Module Illustrated Parts Breakdown